mosfet half bridge, impulsed series resonant primary


evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #102, on January 23rd, 2021, 05:31 AM »
did 6 tests, with different distances between L1 and L3.
most efficient distance was around 29mm

this from calculated Q of  added parallel capacity to L3 and Voltage of L3.
Measurement was done in ratios.

It confirms my suspicions, loose coupling distance is best at the coil hole radius (diameter was 58mm)

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evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #103, on January 23rd, 2021, 06:03 AM »
ordered a 30mm pertinax (hard weefsel) plate of 220x220mm to be used as a distance holder of L1 L3. it has a K of 5.
It consists of cotton fiber and Phenol resin, hardened under high pressure and temperature.
I dont think I will remove the last 1 mm as it is though material



evostars

Series Mosfets with isolated gate drivers
« Reply #106, on January 24th, 2021, 03:07 AM »
Would it be possible to drive 2 series mosfets with 2 isolated gate drivers?
I don't see why not.
that means 2x 1700V= 3400V total
combined with 4 series 1000v diodes should give real HV impulses.

I looked into this before and didn't see a solution, but the isolated gate drivers should make it possible.

evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #107, on January 24th, 2021, 03:23 AM »
blocking diodes would need to be placed upright, with cooling fans on top.
so the 4 diodes per set of mosfets would fit maybe under 1 larger 1 fan.

This setup would also be for a larger coil setup, maybe solenoid, air core. large diameter. 1:1

evostars

Series mosfet producing 2700V impulse 500nS
« Reply #108, on January 28th, 2021, 06:02 AM »
YES!
It works!
I used 2x 1200V Sic mosfets (actually can handle 1500V each) in SERIES.
made a radiant power 2019 setup, without dc offset, and generated the impulses.

I used 3 series mur8100 diodes and these stayed cool. But thats no wonder in this setup, they only really work in the half bridge setup.

But it works!!!

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evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #109, on January 28th, 2021, 01:07 PM »Last edited on January 28th, 2021, 01:44 PM
I have an idea, to switch the L1 coil in the middle (bifilar)
this would simultaneously create a positive and negative impulse.

these would be inserted into separate L2 and L3 series resonant primary coils.

then 2 secondary coils l4 and l5 would be used, maybe in parallel or series, but at least both parallel resonant

or... second photo, use one series resonant to power L1 and the other for L3

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evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #110, on January 29th, 2021, 02:26 AM »
Since my series 1200V mosfets can already generate 3500V (3700V max) impulses,
I will not use the expensive 1700V mosfets for testing.

Because: I will need much higher input voltages to reach higher impulse voltage, and I need lower frequencies to get that high voltages.

Also, I published the C3M mosfet half bridge PCB and I want to continue using that.
So I will build another board like that (as people already have copied it).

My current c3m mosfets are 900V, I should check I don't think I have the c3m 1200V mosfets...

if so, I will first use the C2M board as I do have those parts.

evostars

SERIES mosfet half bridge, impulsed series resonant primary
« Reply #111, on January 29th, 2021, 06:46 AM »
almost finished makimg the second pcb board, for testing series mosfet half bridge.

Doubt if I should use 1200 or 1700V SiC mosfets.

I have 4x 1700V (pricey) but those will need 2x 5x mur8100e diodes. Also they would need lower frequency and higher DC input volttages to reach the high voltage impulses.

on the other hand... I CAN use them and never drive it to th border line, keeping them safe and working. and hey... why not?

One diode is already on the pcb, so I will make 2 extra pcb boards for the 4x diodes.

drive it to the max. see what happens.

Ok 1700V it is... then the question is, shall I put the mosfets directly on the board, or use  screw seats so I can easily swap them out?

Ah yes! they need seats, as they have 4 pins. Alright. lets continue

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evostars

C2m0080170P pinout
« Reply #112, on January 29th, 2021, 08:14 AM »Last edited on January 29th, 2021, 02:26 PM
pinout of the 1700V mosfets are different, dont work with my pcb design (or have to swap leads with extra... nope
back to 1200V.
luckily I places seats

edit : I still have the H bridge driver boards where they come out from. If I replace the isolated dcdc drivers, it might work.
depending on the caps that are already there.

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evostars

first test with series mosfet half bridge
« Reply #114, on February 1st, 2021, 11:51 AM »Last edited on February 1st, 2021, 02:27 PM
Did the first test today with the 2x2series mosfets halfbridge today.
After some small corrections, everything worked.
one of my BNC T split 3x female adapters fell apart. china junk... luckily I could fix it.

I used a large 1,5mm2 L2 coil which slowed down the impulses to 700nS duration, So I had to pump in a lot more energy to get the impulsed high voltage.

Both the positive and negative impulses worked again. Great to see it.

I dared to crank up the impulse voltage using high amps. I worked around 36kcps

Until I saw a flash at the low side, and I quickly turned it off again. The impulses were around 3000V positive and negative.
One of the gate driver IC's died. And altough I measured the right voltages after wards, I think I also blew one of my isolated DC to DC converters.

I'll have to check what the impulse rating is on those RECOM R12P22005D  converters. I bet I went to high. |But hej! it worked!
and I can repair it.

Next test will also be with a heat camera, and slower step up of input power, so I know where the threshold is.

I used 4x mur8100eg per side to block the impulses (4000V max)

L3 was a 4mm2 small coil, close coupled to the Large L2, 1,5mm2
L1 was a "normal" 2,5mm2 coil, loose coupled to L3, 30mm

I also used my new dual channel square wave gen, its a JDS6600-60M from china. No Fan! works great.
First looked at the signal on the scope, tweaked until I had a square wave plus 5 and 0 volt.

also found out the rigol signal that I used before (with horrible Fan) was not 3.5V but 7V. that thing is horrible to control. I'll put it on the shelf for backup (or a second lab)

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evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #115, on February 1st, 2021, 11:59 AM »
recom R12P22005D specs:
https://www.mouser.in/datasheet/2/468/RxxP2xxyy-1709962.pdf

Isolation Voltage I/P to O/P:

tested for 1 second  6.4kVDC
tested for 1 minute   5.2kVDC
tested for 1 minute   3kVAC

Pretty vague, not much info. I think I need to stick to max 2,5kV and see how that holds up.
In the end I want to use the C3M mosfets again, with the murata converters, So I will need to test again then. but the 1200V sic are out of stock...

evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #116, on February 2nd, 2021, 04:02 AM »
dont think the isolated dc dc converter was the problem.

1 gate driver IC dead
1 Mosfet Dead

cause:
sparkover on smd to tht conversion pcb.
the isolation on that board is to low.

need to redesign pcb for direct placement if smd gate driver IC.

or make my own conversion pcb which does isolate. this has the benefit if easy repair if a gate driver decides to die

the back side of the smd tht pcb has another circuit that I could remove, this has closer leads...

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evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #117, on February 3rd, 2021, 04:24 AM »Last edited on February 3rd, 2021, 04:50 AM
got the system working and did some testing.

I injected 1500V impulses into L2, and made it LMD resonant with L3.

L3 had 20 A peak to peak and became hot. this is a small 4mm2 coil.
L3 voltages 1200V peak to peak.
L3 parallel capacity 61nF

L2 series capacity 51nF L2 is large 1.5mm2 coil.

this required 121.7W of power.
2x 32.3V at 1.89A
 :huh:

Resonant frequency 91.2kcps using new square wave generator (tunes a lot smoother now)

L1 is a middle sized 2.5mm2 coil and is flipped over. loose coupled to L3 by 30mm plate (k=5)

This was with no load on L3

Looking good.

I designed a new pcb for the smd gate driver IC so it will have a higher isolation value.

1700V will not be used. 1200V is enough for now. it can give 3. 5kV impulses

Now do this same setup, with L3 loaded, this should bring the power supply consumption down (how weird that sounds, I seen it before)



evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #120, on February 3rd, 2021, 10:55 AM »
ran the same setup, but now loaded L3 with 40W lamp (first rectified to DC).
And indeed, the power from the input now goes down to 52.81W pretty big difference, before it was 121W

lamp was 181.8V dc at 168mA gives 30.54W 
at 91.2 kcps same as previous test,

this is still not fine tuned

evostars

Tesla's last interview
« Reply #121, on February 3rd, 2021, 02:05 PM »Last edited on February 4th, 2021, 02:22 AM
I found this interview with Tesla here on the forum (posted by Matt Watts)

I used google translate to verify and Some parts are not properly translated!

It is a very insightful document.

Sadly Tesla's work on gravity can not be found. But the document says alot.

I might translate it agian into a new document, and check it by a Russian speaking friend

the picture is a fountain just like this patent from Tesla
https://teslauniverse.com/nikola-tesla/patents/us-patent-1113716-fountain

this is where the article comes from:
http://isedworld.org/2016/12/03/последнее-прижизненное-интервью-ник/

It thanks the translator, but it is in Russian. So I would love to see the original language interview.

The picture attached, is from the water fountain patent.
You can see a propeller, that thrusts the water up. In my opinion, this forms a watervortex (transverse), that flows up (along the sides of the basin, so the basin in mostly empty like the inside of a water vortex is filled with air)
Then it falls over the edge, which is just like the ring vortex (longitudinal).
In the Article of the Tesla interview, he added a drawing, which shows small motors that are power from this longitudinal  overflow

 Last lifetime interview of Nikola Tesla.pdf - 503.54 kB, downloaded 11 times.

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evostars

Re: mosfet half bridge, impulsed series resonant primary
« Reply #123, on February 4th, 2021, 07:24 AM »
Quote from securesupplies on February 4th, 2021, 05:39 AM
can we make a fast pico second scr style switch board ?

here is example but we need pico second speed components
Why pico second? that is super fast. then you would also need super high voptage impulses to set the aether into motion.

I don't know. I don't work at those speeds. Below 10ns is out of my league.

Maybe look into 5G wifi technology? that's a lot faster

securesupplies

Re: mosfet half bridge, impulsed series resonant primary
« Reply #124, on February 4th, 2021, 11:04 AM »Last edited on February 4th, 2021, 01:24 PM by evostars
the magnifications is there  the electrons  cascade out at that speed l need to list parts in this category