Slowly my radiant coil capacitor project comes to a conclusion.
And I realize, I can continue my research on a different path.

Instead of using a coil voltage impulse, which has dual polarity displacement currents

I now need to develop a solid state capacitor current impulse.

Since SiC Mosfets nowadays have high voltage capabilities, and low on resistance, my first tests will be, to see how small a capacitor needs to be to be able to discharge it through a MOSFET.

The high currents will be short but intense, thus the MOSFET will need active cooling, I wonder if liquid cooling would work.

The capacitor needs to be small, so it doesn't instantly fry the MOSFET.

I will also need a high voltage source, but that seems easy.

and, I need a plate(coil) to produce the displacement current. from the high dV/dt

A new circuit needs to be formed, which uses this unidirectional displacement to amplify resonance energy.
to create an inflow of energy into a vacuum of energy.

Thyristors might work but I need proper controll, so I will start wit mosfets

https://assets.wolfspeed.com/uploads/2020/12/C3M0021120D.pdf

21mOhm 1200V with 200A peak pulse current
If I parallel + series these I could get proper results

https://www.digikey.nl/en/resources/conversion-calculators/conversion-calculator-time-constant
t=RC
this RC calculator, gives a 800 ns discharge time, for a 40nF 2000V charged capacitor through a 0.021 ohm (mosfet Rds) resistor.

the energy is 0.08J
t=RC
0.08J/800ns=100kW / 2000V=50A peak

So 160nF gives 200A at 2000V with 0.021Ohm.

I can parallel MOSFETS, and reduce the resistance and RC time. that will be expensive, since a single gate driver can drive multiple mosfets in parallel this should be cheaper. altough... ringing would increase, due to larger gate source lines.

best is still a single driver per mosfet, but the isolated DC to DC could be shared, with multiple gate driver IC's
this brings the cost down, as the isolated DC to DC converters are expensive.

I want to use this with my L2 primary coil, which has a large 1uF C1 cap on the outside rim.
The inside rim will have the 100nF C2 cap. L2 is charged up by the impulses, with DC.
Then after a few charge cycles, during the impulse, the mosfets will discharge the DC.
The discahrge mosfets will be placed, at the C2 L2 junction, and switch to ground(or into a large cap?)

L2 will act as a diode, with its high impedance, for the C1 1uF cap. So this cap should discharge much less.
But this will also mean, that L2 will have a large voltage difference over its ends.
C2 being discharged, while C1 still being largely charged to 2kV.
L2 being Bifilar, will get a huge dielectric field change in itself, which should be good.
But what about, after the discharge?

The impulse should again charge up the dc offset on L2 slowly. to avoid a back rush of the displacement current.
but C1 is still fairly high charged at the ouside rim of L2. so it should start charging C1 again, through L2...
at the same time the impulses continue to charge L2. But, from which end? I would think from the inside rim, where C2 is connected.

Hmm. or... since the mosfets discharge at C2, no, that would not cause a problem

I wonder how this will play out in real life.
Since L2 is series resonant, its impedance should be low. thus, L2 would not act as a diode, for the C1 during the rapid discharge.
If it is included, then the amps will be much higher...
altough the wire resistance of the coil would still reduce the currents of the c1 capacitor discharge.

I guess, the tests would need to closely watch the mosfet temperatures, while slowly increacing the impulse voltage (creating the DC offset) by increasing the PSU voltage.

probing L2 at both ends to see the voltage changes
If there indeed is a difference, than that would mean, the displacement current will also take a different shape! more on the inside rim center hole, with less on the outside rim.

since the L2 primary is a large bifilar pancake coil, with a DC offset, a large C1 cap on the outside, and a small C2 on the inside

whereby by the inside Rim is discharged through a mosfet, the small C2 and the low Rds give a fast displacement current on the inside.
But the coil resistance is much larger, and the C1 outside rim capacitor is much larger, giving a much larger RC time.
Thus there the displacement current is weaker.

this means the main displacement current is in the center hole of the pancake coil stack. moving through the center holes, amplifying the resonance there. But also continue moving outside the coils, and forming
THE RING VORTEX
which I have been thinking about for so long.

This vortex could even circle around the whole coil stack, closing the loop to the L1 coil on the other side.

A lot of speculation....

Now how to realize this?
The mosfet square wave signal, should be buffered for a few cycles, which give time for the DC offset to charge up at C2.
Then the discahrge mosfets should be triggered, discharging C2. as this is a fast event, the mosfet should quickly turn off again, to let the impulses charge up C2 again.

The discharge would happen at the time of the impulse. Which would also mean, a lower voltage.

I should measure the charging cycle of My DC offset and see how much time it need to charge up the dc off set, from zero.

NIce Work Evo Thank you for posting these steps I wonder if S Marks build a better capacitor? in TPU

Quote from securesupplies on January 10th, 2023, 08:37 PM

NIce Work Evo Thank you for posting these steps I wonder if S Marks build a better capacitor? in TPU

yes based on the TPU. His coil capacitors became much to hot, so... I think not